Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives
High-resistivity polycrystalline silicon (HRPS) wafers are explored as a novel low-cost and low-loss substrate for radio-frequency (RF) passive components in wafer-level packaging (WLP) and integrated passive networks. A record quality factor (Q=11; 1 GHz; 34 nH) and very low loss (0.65 dB/cm; 17 GH...
Main Authors: | , , , , , |
---|---|
Format: | Conference Object |
Language: | English |
Published: |
IEEE
2004
|
Subjects: | |
Online Access: | http://hdl.handle.net/1822/1629 |
id |
ftunivminho:oai:repositorium.sdum.uminho.pt:1822/1629 |
---|---|
record_format |
openpolar |
spelling |
ftunivminho:oai:repositorium.sdum.uminho.pt:1822/1629 2023-05-15T15:45:13+02:00 Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives Bartek, M. Polyakov, A. Sinaga, S. M. Mendes, P. M. Correia, J. H. Burghartz, J. N. 2004-10 application/pdf http://hdl.handle.net/1822/1629 eng eng IEEE ASDAM. INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 5, Smolenice Castle, 2004 - "Proceedings". Piscataway : IEEE, 2004. ISBN 0-7803-8535-7. p. 227-230. 0-7803-8535-7 http://hdl.handle.net/1822/1629 info:eu-repo/semantics/openAccess Wafer level packaging Radio frequency (RF) integration info:eu-repo/semantics/conferencePaper 2004 ftunivminho 2022-03-20T08:07:48Z High-resistivity polycrystalline silicon (HRPS) wafers are explored as a novel low-cost and low-loss substrate for radio-frequency (RF) passive components in wafer-level packaging (WLP) and integrated passive networks. A record quality factor (Q=11; 1 GHz; 34 nH) and very low loss (0.65 dB/cm; 17 GHz) are demonstrated for inductors and coplanar wave guides, respectively. The waferlevel packaging solution is based on an adhesive bonding of a passive HRPS wafer to an active silicon IC wafer, where the HRPS wafer serves as a mechanical carrier and vertical spacer. This enables integration of large RF passives with a vertical spacing of >150 µm to the conductive silicon substrate containing the circuitry, while providing mechanical stability, reducing form factor and avoiding any additional RF loss. The HRPS substrates have high dielectric constant, low RF loss, high thermal conductivity, perfect thermal matching, and processing similar to the single-crystalline silicon. Philips Semiconductors and Philips Research in the context of the Philips Associate Centre at DIMES (PACD); Fundação para a Ciência e Tecnogia (FCT) (SFRH/BD/4717/2001, POCTI/ESE/38468/2001, FEDER), and the European Commission (project Blue Whale ... Conference Object Blue whale Universidade of Minho: RepositóriUM |
institution |
Open Polar |
collection |
Universidade of Minho: RepositóriUM |
op_collection_id |
ftunivminho |
language |
English |
topic |
Wafer level packaging Radio frequency (RF) integration |
spellingShingle |
Wafer level packaging Radio frequency (RF) integration Bartek, M. Polyakov, A. Sinaga, S. M. Mendes, P. M. Correia, J. H. Burghartz, J. N. Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives |
topic_facet |
Wafer level packaging Radio frequency (RF) integration |
description |
High-resistivity polycrystalline silicon (HRPS) wafers are explored as a novel low-cost and low-loss substrate for radio-frequency (RF) passive components in wafer-level packaging (WLP) and integrated passive networks. A record quality factor (Q=11; 1 GHz; 34 nH) and very low loss (0.65 dB/cm; 17 GHz) are demonstrated for inductors and coplanar wave guides, respectively. The waferlevel packaging solution is based on an adhesive bonding of a passive HRPS wafer to an active silicon IC wafer, where the HRPS wafer serves as a mechanical carrier and vertical spacer. This enables integration of large RF passives with a vertical spacing of >150 µm to the conductive silicon substrate containing the circuitry, while providing mechanical stability, reducing form factor and avoiding any additional RF loss. The HRPS substrates have high dielectric constant, low RF loss, high thermal conductivity, perfect thermal matching, and processing similar to the single-crystalline silicon. Philips Semiconductors and Philips Research in the context of the Philips Associate Centre at DIMES (PACD); Fundação para a Ciência e Tecnogia (FCT) (SFRH/BD/4717/2001, POCTI/ESE/38468/2001, FEDER), and the European Commission (project Blue Whale ... |
format |
Conference Object |
author |
Bartek, M. Polyakov, A. Sinaga, S. M. Mendes, P. M. Correia, J. H. Burghartz, J. N. |
author_facet |
Bartek, M. Polyakov, A. Sinaga, S. M. Mendes, P. M. Correia, J. H. Burghartz, J. N. |
author_sort |
Bartek, M. |
title |
Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives |
title_short |
Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives |
title_full |
Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives |
title_fullStr |
Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives |
title_full_unstemmed |
Characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of RF passives |
title_sort |
characterization of high-resistivity polycrystalline silicon substrates for wafer-level packaging and integration of rf passives |
publisher |
IEEE |
publishDate |
2004 |
url |
http://hdl.handle.net/1822/1629 |
genre |
Blue whale |
genre_facet |
Blue whale |
op_relation |
ASDAM. INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 5, Smolenice Castle, 2004 - "Proceedings". Piscataway : IEEE, 2004. ISBN 0-7803-8535-7. p. 227-230. 0-7803-8535-7 http://hdl.handle.net/1822/1629 |
op_rights |
info:eu-repo/semantics/openAccess |
_version_ |
1766379549582426112 |