Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Published in: Beilstein Journal of Nanotechnology
• Main Authors: T P, Ragesh Kumar, Hari, Sangeetha, Damodaran, Krishna Kumar, Ingólfsson, Oddur, Hagen, Cornelis W
• Other Authors: Raunvísindadeild (HÍ), Faculty of Physical Sciences (UI), Raunvísindastofnun (HÍ), Science Institute (UI), Verkfræði- og náttúruvísindasvið (HÍ), School of Engineering and Natural Sciences (UI), Háskóli Íslands, University of Iceland
• Format: Article in Journal/Newspaper
• Language: English
• Published: Beilstein Institut 2017
• Subjects: Dichlorosilacyclohexane; Dissociative electron attachment; Dissociative ionization; Electrons; Efnafræði; Rafeindir; Iceland
• Online Access: https://hdl.handle.net/20.500.11815/486; https://doi.org/10.3762/bjnano.8.237

We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition. CWH likes to thank Luc van Kessel, Kerim Arat and Sebastiaan Lokhorst for their assistance with the Monte Carlo simulations of Figure 10. OI acknowledges supported from the Icelandic Center of Research (RANNIS) Grant No. 13049305(1-3) and the University of Iceland Research Fund. RKTP acknowledges a doctoral grant from the University of Iceland Research Fund and financial support from the COST Action CM1301; CELINA, for short term scientific missions (STSMs) Peer Reviewed