Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

• Published in: Sensors
• Main Authors: Aghabalaei Fakhri, Elham, Plugaru, Rodica, Sultan, Muhammad Taha, Kristinsson, Thorsteinn, Árnason, Hákon Örn, Plugaru, Neculai, Manolescu, Andrei, Ingvarsson, Snorri, Svavarsson, Halldor
• Other Authors: Department of Engineering (RU), Verkfræðideild (HR), School of Technology (RU), Tæknisvið (HR), Science Institute (UI), Raunvísindastofnun (HÍ), Reykjavik University, Háskólinn í Reykjavík, University of Iceland, Háskóli Íslands
• Format: Article in Journal/Newspaper
• Language: English
• Published: MDPI AG 2022
• Subjects: Electrical and Electronic Engineering; Biochemistry; Instrumentation; Atomic and Molecular Physics; Optics; Analytical Chemistry; Silicon nanowires; MACE; Piezoresistivity; Rafmagnsverkfræði; Rafeindaverkfræði; Lífefnafræði; Tækjafræði; Atómfræði; Sameindafræði; Ljósfræði; Efnafræði; Nanótækni; Kísill; Mace; Reykjavík
• Online Access: https://hdl.handle.net/20.500.11815/4023; https://doi.org/10.3390/s22176340

Publisher's version (útgefin grein) Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire...