Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Publisher's version (útgefin grein) Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire...

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Bibliographic Details
Published in:Sensors
Main Authors: Aghabalaei Fakhri, Elham, Plugaru, Rodica, Sultan, Muhammad Taha, Kristinsson, Thorsteinn, Árnason, Hákon Örn, Plugaru, Neculai, Manolescu, Andrei, Ingvarsson, Snorri, Svavarsson, Halldor
Other Authors: Department of Engineering (RU), Verkfræðideild (HR), School of Technology (RU), Tæknisvið (HR), Science Institute (UI), Raunvísindastofnun (HÍ), Reykjavik University, Háskólinn í Reykjavík, University of Iceland, Háskóli Íslands
Format: Article in Journal/Newspaper
Language:English
Published: MDPI AG 2022
Subjects:
Electrical and Electronic Engineering
Biochemistry
Instrumentation
Atomic and Molecular Physics
Optics
Analytical Chemistry
Silicon nanowires
MACE
Piezoresistivity
Rafmagnsverkfræði
Rafeindaverkfræði
Lífefnafræði
Tækjafræði
Atómfræði
Sameindafræði
Ljósfræði
Efnafræði
Nanótækni
Kísill
Mace
Reykjavík
Online Access:https://hdl.handle.net/20.500.11815/4023
https://doi.org/10.3390/s22176340
Description
Summary:Publisher's version (útgefin grein) Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1 mbar pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure. Reykjavík University Peer reviewed

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