Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition
Motivated by the use of tetrakis(dimethylamino)silane (TKDMAS) to produce silicon nitride-based deposits and its potential as a precursor for Focused Electron Beam Induced Deposition (FEBID), we have studied its reactivity towards low energy electrons in the gas phase and the composition of its depo...
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ftopinvisindi:oai:opinvisindi.is:20.500.11815/3283 2023-05-15T16:51:22+02:00 Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition Shih, Po-Yuan Tafrishi, Reza Cipriani, Maicol Hermanns, Christian Felix Oster, Jens Gölzhäuser, Armin Edinger, Klaus Ingólfsson, Oddur Raunvísindadeild (HÍ) Faculty of Physical Sciences (UI) Verkfræði- og náttúruvísindasvið (HÍ) School of Engineering and Natural Sciences (UI) Háskóli Íslands University of Iceland 2022-03-30 9564-9575 https://hdl.handle.net/20.500.11815/3283 en eng Royal Society of Chemistry (RSC) info:eu-repo/grantAgreement/EC/H2020/722149 Physical Chemistry Chemical Physics;24(16) Shih, Po-Yuan, Tafrishi, Reza, Cipriani, Maicol, Hermanns, Christian Felix, Oster, Jens, Gölzhäuser, Armin . Ingólfsson, Oddur (2022). Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition. Physical Chemistry Chemical Physics (PCCP) 24(16), 9564-9575 1463-9076 1463-9084 (eISSN) https://hdl.handle.net/20.500.11815/3283 Physical Chemistry Chemical Physics (PCCP) org/10.1039/D2CP00257D info:eu-repo/semantics/embargoedAccess Physical and Theoretical Chemistry Efnafræði info:eu-repo/semantics/article 2022 ftopinvisindi https://doi.org/20.500.11815/3283 https://doi.org/10.1039/D2CP00257D 2022-11-18T06:52:21Z Motivated by the use of tetrakis(dimethylamino)silane (TKDMAS) to produce silicon nitride-based deposits and its potential as a precursor for Focused Electron Beam Induced Deposition (FEBID), we have studied its reactivity towards low energy electrons in the gas phase and the composition of its deposits created by FEBID. While no negative ion formation was observed through dissociative electron attachment (DEA), significant fragmentation was observed in dissociative ionization (DI). Appearance energies (AEs) of fragments formed in DI were measured and are compared to the respective threshold energies calculated at the DFT and coupled cluster (CC) levels of theory. The average carbon and nitrogen loss per DI incident is calculated and compared to its deposit composition in FEBID. We find that hydrogen transfer reactions and new bond formations play a significant role in the DI of TKDMAS. Surprisingly, a significantly lower nitrogen content is observed in the deposits than is to be expected from the DI experiments. Furthermore, a post treatment protocol using water vapour during electron exposure was developed to remove the unwanted carbon content of FEBIDs created from TKDMAS. For comparison, these were also applied to FEBID deposits formed with tetraethyl orthosilicate (TEOS). In contrast, effective carbon removal was achieved in post treatment of TKDMAS. This approach only marginally affected the composition of deposits made with TEOS. The Icelandic Centre of Research (RANNIS), grant no. 13049305(1−3). MC acknowledges a doctoral grant from the University of Iceland Research Fund. Peer Reviewed Article in Journal/Newspaper Iceland Opin vísindi (Iceland) Physical Chemistry Chemical Physics 24 16 9564 9575 |
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English |
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Physical and Theoretical Chemistry Efnafræði |
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Physical and Theoretical Chemistry Efnafræði Shih, Po-Yuan Tafrishi, Reza Cipriani, Maicol Hermanns, Christian Felix Oster, Jens Gölzhäuser, Armin Edinger, Klaus Ingólfsson, Oddur Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition |
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Physical and Theoretical Chemistry Efnafræði |
description |
Motivated by the use of tetrakis(dimethylamino)silane (TKDMAS) to produce silicon nitride-based deposits and its potential as a precursor for Focused Electron Beam Induced Deposition (FEBID), we have studied its reactivity towards low energy electrons in the gas phase and the composition of its deposits created by FEBID. While no negative ion formation was observed through dissociative electron attachment (DEA), significant fragmentation was observed in dissociative ionization (DI). Appearance energies (AEs) of fragments formed in DI were measured and are compared to the respective threshold energies calculated at the DFT and coupled cluster (CC) levels of theory. The average carbon and nitrogen loss per DI incident is calculated and compared to its deposit composition in FEBID. We find that hydrogen transfer reactions and new bond formations play a significant role in the DI of TKDMAS. Surprisingly, a significantly lower nitrogen content is observed in the deposits than is to be expected from the DI experiments. Furthermore, a post treatment protocol using water vapour during electron exposure was developed to remove the unwanted carbon content of FEBIDs created from TKDMAS. For comparison, these were also applied to FEBID deposits formed with tetraethyl orthosilicate (TEOS). In contrast, effective carbon removal was achieved in post treatment of TKDMAS. This approach only marginally affected the composition of deposits made with TEOS. The Icelandic Centre of Research (RANNIS), grant no. 13049305(1−3). MC acknowledges a doctoral grant from the University of Iceland Research Fund. Peer Reviewed |
author2 |
Raunvísindadeild (HÍ) Faculty of Physical Sciences (UI) Verkfræði- og náttúruvísindasvið (HÍ) School of Engineering and Natural Sciences (UI) Háskóli Íslands University of Iceland |
format |
Article in Journal/Newspaper |
author |
Shih, Po-Yuan Tafrishi, Reza Cipriani, Maicol Hermanns, Christian Felix Oster, Jens Gölzhäuser, Armin Edinger, Klaus Ingólfsson, Oddur |
author_facet |
Shih, Po-Yuan Tafrishi, Reza Cipriani, Maicol Hermanns, Christian Felix Oster, Jens Gölzhäuser, Armin Edinger, Klaus Ingólfsson, Oddur |
author_sort |
Shih, Po-Yuan |
title |
Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition |
title_short |
Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition |
title_full |
Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition |
title_fullStr |
Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition |
title_full_unstemmed |
Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition |
title_sort |
dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition |
publisher |
Royal Society of Chemistry (RSC) |
publishDate |
2022 |
url |
https://hdl.handle.net/20.500.11815/3283 |
genre |
Iceland |
genre_facet |
Iceland |
op_relation |
info:eu-repo/grantAgreement/EC/H2020/722149 Physical Chemistry Chemical Physics;24(16) Shih, Po-Yuan, Tafrishi, Reza, Cipriani, Maicol, Hermanns, Christian Felix, Oster, Jens, Gölzhäuser, Armin . Ingólfsson, Oddur (2022). Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition. Physical Chemistry Chemical Physics (PCCP) 24(16), 9564-9575 1463-9076 1463-9084 (eISSN) https://hdl.handle.net/20.500.11815/3283 Physical Chemistry Chemical Physics (PCCP) org/10.1039/D2CP00257D |
op_rights |
info:eu-repo/semantics/embargoedAccess |
op_doi |
https://doi.org/20.500.11815/3283 https://doi.org/10.1039/D2CP00257D |
container_title |
Physical Chemistry Chemical Physics |
container_volume |
24 |
container_issue |
16 |
container_start_page |
9564 |
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9575 |
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1766041480762228736 |