25-Gb/s Transmission Over 2.5-km SSMF by Silicon MRR Enhanced 1.55-mu m III-V/SOI DML

The use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GH...

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Bibliographic Details
Published in:IEEE Photonics Technology Letters
Main Authors: Cristofori, Valentina, Da Ros, Francesco, Ozolins, Oskars, Chaibi, Mohamed E., Bramerie, Laurent, Ding, Yunhong, Pang, Xiaodan, Shen, Alexandre, Gallet, Antonin, Duan, Guang-Hua, Hassan, Karim, Olivier, Segolene, Popov, Sergei, Jacobsen, Gunnar, Oxenløwe, Leif Katsuo, Peucheret, Christophe
Format: Article in Journal/Newspaper
Language:English
Published: 2017
Subjects:
Soi
DML
Online Access:https://orbit.dtu.dk/en/publications/9bc8d933-925e-4ca1-8d9c-36681af9ea2d
https://doi.org/10.1109/LPT.2017.2700497
https://backend.orbit.dtu.dk/ws/files/162349059/Cristofori_ptl_2017_preprint.pdf
Description
Summary:The use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-mu m directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER <10(-9)) at 25 Gb/s data rate over 2.5-km standard single mode fiber without dispersion compensation nor forward error correction. As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications.