25-Gb/s transmission over 2.5-km SSMF by silicon MRR enhanced 1.55-μm III-V/SOI DML

• Published in: 2017 IEEE Photonics Conference (IPC)
• Main Authors: Cristofori, Valentina, Da Ros, Francesco, Ozolins, Oskars, Chaibi, Mohamed E., Bramerie, Laurent, Ding, Yunhong, Pang, Xiaodan, Shen, Alexandre, Gallet, Antonin, Duan, Guang-Hua, Hassan, Karim, Olivier, Segolene, Popov, Sergei, Jacobsen, Gunnar, Oxenløwe, Leif Katsuo, Peucheret, Christophe
• Format: Article in Journal/Newspaper
• Language: English
• Published: IEEE 2017
• Subjects: Photonic integrated circuits; Resonators flters; Optical transmitters; Soi; DML
• Online Access: https://orbit.dtu.dk/en/publications/8c1a6d7f-5bf1-448d-92b9-8518cc8935e8; https://doi.org/10.1109/IPCon.2017.8116138; https://backend.orbit.dtu.dk/ws/files/141970385/25GbsDML_Cristofori_final.pdf

The use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-μm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER< 10 −9 ) at 25 Gb/s data rate over 2.5-km SSMF without dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications.