GaAs FET Logic at Low Temperatures.
Efforts during the first year of this contract have concentrated on process development, material development and characterization and circuit development. Preliminary results on single stage inverters show about a two-fold speed advantage at 77 K compared to that at 300 K for material doped in the...
Main Authors: | , |
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Format: | Text |
Language: | English |
Published: |
1980
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Online Access: | http://www.dtic.mil/docs/citations/ADA098390 http://oai.dtic.mil/oai/oai?&verb=getRecord&metadataPrefix=html&identifier=ADA098390 |
Summary: | Efforts during the first year of this contract have concentrated on process development, material development and characterization and circuit development. Preliminary results on single stage inverters show about a two-fold speed advantage at 77 K compared to that at 300 K for material doped in the mid-ten to the 16th per cu cm range. This advantage is offset by an aprox. 90% increase in power dissipation at 77 K compared to that at 300 K, so the speed-power product is approximately the same at the two temperatures. A more accurate assessment of circuit speed and power dissipation is expected by the use of ring oscillators. Accordingly, work has been concentrated in this area during the latter part of this period. (Author) |
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