GaAs FET Logic at Low Temperatures.

Efforts during the first year of this contract have concentrated on process development, material development and characterization and circuit development. Preliminary results on single stage inverters show about a two-fold speed advantage at 77 K compared to that at 300 K for material doped in the...

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Bibliographic Details
Main Authors: Namordi,M R, Doerbeck,F H
Other Authors: TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS
Format: Text
Language:English
Published: 1980
Subjects:
Electrical and Electronic Equipment
Solid State Physics
*GALLIUM ARSENIDES
*INTEGRATED CIRCUITS
*FIELD EFFECT TRANSISTORS
*LOGIC CIRCUITS
*CRYOGENICS
VELOCITY
OSCILLATORS
LOW TEMPERATURE
TWO DIMENSIONAL
MATERIALS
PROCESSING
DISSIPATION
POWER
CIRCUITS
RINGS
LOGIC
INVERTER CIRCUITS
DML(Depletion Mode Logic)
Ring oscillators
Propagation delay
WUNR383051
PE62762N
DML
Online Access:http://www.dtic.mil/docs/citations/ADA098390
http://oai.dtic.mil/oai/oai?&verb=getRecord&metadataPrefix=html&identifier=ADA098390
Description
Summary:Efforts during the first year of this contract have concentrated on process development, material development and characterization and circuit development. Preliminary results on single stage inverters show about a two-fold speed advantage at 77 K compared to that at 300 K for material doped in the mid-ten to the 16th per cu cm range. This advantage is offset by an aprox. 90% increase in power dissipation at 77 K compared to that at 300 K, so the speed-power product is approximately the same at the two temperatures. A more accurate assessment of circuit speed and power dissipation is expected by the use of ring oscillators. Accordingly, work has been concentrated in this area during the latter part of this period. (Author)

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