The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance

• Published in: Frontiers in Electronics
• Main Authors: Federica Catania, Hugo De Souza Oliveira, Martina A. Costa Angeli, Manuela Ciocca, Salvador Pané, Niko Münzenrieder, Giuseppe Cantarella
• Format: Article in Journal/Newspaper
• Language: English
• Published: Frontiers Media S.A. 2022
• Subjects: thin-film transistors (TFTs); flexible electronics; oxide semiconductors; indium-gallium-zinc-oxide (IGZO); wearable electronics; humidity sensor; Electrical engineering. Electronics. Nuclear engineering; TK1-9971; Antarctic; Antarc*
• Online Access: https://doi.org/10.3389/felec.2021.786601; https://doaj.org/article/15f4f370ed9544158d9a33c2b2f9e706

Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly required. The combined effects of temperature (T) from −30.0°C to 50.0°C and relative humidity (RH) stress from 0 to 95% on a-IGZO TFT is presented. The TFT performances and the parameters variation were analysed in two different experiments. First, the TFT response was extracted while undergoing the most extreme climate conditions on Earth, ranging from the African Desert (50.0°C, 22%) to Antarctic (−30.0°C, 0%). Afterwards, the device functionality was demonstrated in three parts of the human body (forehand, arm and foot) at low (35%), medium (60%) and high (95%) relative humidity for on-skin and wearable applications. The sensitivity to T/RH variations suggests the suitability of these TFTs as sensing element for epidermal electronics and artificial skin.