Radiation imaging with a new scintillator and a CMOS camera

A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga) 5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camer...

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Bibliographic Details
Published in:Journal of Instrumentation
Main Authors: Kurosawa, S., Shoji, Y., Pejchal, J. (Jan), Yokota, Y., Yoshikawa, A.
Format: Article in Journal/Newspaper
Language:English
Published: 2014
Subjects:
scintillators
scintillation and light emission processes
image processin
Orca
Online Access:https://doi.org/10.1088/1748-0221/9/07/C07015
http://hdl.handle.net/11104/0256985
Description
Summary:A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga) 5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 x 0.4 mm and we succeeded in obtaining the alpha-ray images sing 1-mm thick Ce:GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.

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