МАГНИТОХИМИЧЕСКИЕ ОСОБЕННОСТИ ИЗГОТОВЛЕНИЯ МАГНИТОРЕЗИСТИВНЫХ ДАТЧИКОВ В ИНТЕГРАЛЬНЫХ МИКРОСХЕМАХ

• Main Authors: Нецветов, В., Медведев, Ю., Щиголев, В., Коссе, А., Хиженков, П.
• Format: Text
• Language: unknown
• Published: Институт прикладной физики Академии наук Молдовы 2010
• Subjects: North Pole
• Online Access: http://cyberleninka.ru/article/n/magnitohimicheskie-osobennosti-izgotovleniya-magnitorezistivnyh-datchikov-v-integralnyh-mikroshemah; http://cyberleninka.ru/article_covers/15453411.png

Mechanism of uneven chemical etching of quartz insulating covering layer (SiO 2) in the etching windows over outflow sites of magnetoresistive sensors in a plate with ICs chips (Integrated Circuits) was studied. A reason why a significant difference in the rate of SiO 2 etching over the northern (N) and south (S) magnetic poles induced in the strip sensors during plasma deposition of magnetoresistive layer (iron-nickel alloy in the ratio of Fe 18%, Ni 82% in t a plasma spraying setup UPR-1) is analyzed. A mechanism of not full etching of SiO 2 windows over the north pole of magnetoresistive sensor is revealed. It leads to through-etching of permalloy layer. The reason for this is significant contribution of interaction energy of the magnetic moment of the molecule etchant of hydrofluoric acid HF with scattering magnetic field of the magnetoresistive sensor. The resultant magnetochemical mechanism of interaction between HF and SiO 2 leds to increased chemical interaction of F-HF in molecule over the southern pole of the sensor. This leads to etching of permalloy layer in the southern output areas of the sensors of all the chip plates. Mechanism of uneven chemical etching of quartz insulating covering layer (SiO 2) in the etching windows over outflow sites of magnetoresistive sensors in a plate with ICs chips (Integrated Circuits) was studied. A reason why a significant difference in the rate of SiO 2 etching over the northern (N) and south (S) magnetic poles induced in the strip sensors during plasma deposition of magnetoresistive layer (iron-nickel alloy in the ratio of Fe 18%, Ni 82% in t a plasma spraying setup UPR-1) is analyzed. A mechanism of not full etching of SiO 2 windows over the north pole of magnetoresistive sensor is revealed. It leads to through-etching of permalloy layer. The reason for this is significant contribution of interaction energy of the magnetic moment of the molecule etchant of hydrofluoric acid HF with scattering magnetic field of the magnetoresistive sensor. The resultant magnetochemical mechanism of interaction between HF and SiO 2 leds to increased chemical interaction of F-HF in molecule over the southern pole of the sensor. This leads to etching of permalloy layer in the southern output areas of the sensors of all the chip plates.