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Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption
by
Yuan ZL
,
Xu ZY
,
Zheng BZ
,
Luo CP
,
Xu JZ
,
Ge WK
,
Zhang PH
,
Yang XP
,
Yuan ZL CHINESE ACAD SCIINST SEMICONDNLSMPOB 912BEIJING 100083PEOPLES R CHINA.
Published 1996
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Ge WK
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Luo CP
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Xu JZ
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Xu ZY
1
Yang XP
1
Yuan ZL
1
Yuan ZL CHINESE ACAD SCIINST SEMICONDNLSMPOB 912BEIJING 100083PEOPLES R CHINA
1
Zhang PH
1
Zheng BZ
1
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Dynamics
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Exciton Transfer
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Linewidth
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Molecular-beam Epitaxy
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Monolayer-flat Islands
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Semiconductor Interfaces
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ale
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apcvd
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atomic layer deposition
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atomic layer epitaxial growth
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cbe
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chemical beam epitaxial growth
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chemical vapor deposition
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chemical vapor infiltration
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crystal growth from vapour
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cvd
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cvi
gas source mbe
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gsmbe
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hot wall epitaxial growth
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kinetik
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laser cvd
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laser deposition
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laser-induced cvd
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line width
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lpcvd
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Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences)
1
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Flat Islands
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