Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption

• Main Authors: Yuan, ZL, Xu, ZY, Zheng, BZ, Luo, CP, Xu, JZ, Ge, WK, Zhang, PH, Yang, XP
• Format: Article in Journal/Newspaper
• Language: English
• Published: 1996
• Subjects: Smooth Island
• Online Access: http://repository.ust.hk/ir/Record/1783.1-26484; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0021-8979&rft.volume=79&rft.issue=2&rft.date=1996&rft.spage=1073&rft.epage=1077&rft.aulast=Yuan&rft.aufirst=ZL&rft.atitle=Optical+study+of+heterointerface+configuration+in+narrow+GaAs/AlGaAs+single+quantum+wells+prepared+with+growth+interruption; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1996TQ77500074; http://www.scopus.com/record/display.url?eid=2-s2.0-0029753407&origin=inward

Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with...