Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption
Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with...
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ftunivsthongkong:oai:repository.ust.hk:1783.1-26484 2023-05-15T18:20:02+02:00 Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption Yuan, ZL Xu, ZY Zheng, BZ Luo, CP Xu, JZ Ge, WK Zhang, PH Yang, XP 1996 http://repository.ust.hk/ir/Record/1783.1-26484 http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0021-8979&rft.volume=79&rft.issue=2&rft.date=1996&rft.spage=1073&rft.epage=1077&rft.aulast=Yuan&rft.aufirst=ZL&rft.atitle=Optical+study+of+heterointerface+configuration+in+narrow+GaAs/AlGaAs+single+quantum+wells+prepared+with+growth+interruption http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1996TQ77500074 http://www.scopus.com/record/display.url?eid=2-s2.0-0029753407&origin=inward English eng http://repository.ust.hk/ir/Record/1783.1-26484 Journal of applied physics, v. 79, (2), 1996, JAN 15, p. 1073-1077 0021-8979 http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0021-8979&rft.volume=79&rft.issue=2&rft.date=1996&rft.spage=1073&rft.epage=1077&rft.aulast=Yuan&rft.aufirst=ZL&rft.atitle=Optical+study+of+heterointerface+configuration+in+narrow+GaAs/AlGaAs+single+quantum+wells+prepared+with+growth+interruption http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1996TQ77500074 http://www.scopus.com/record/display.url?eid=2-s2.0-0029753407&origin=inward Article 1996 ftunivsthongkong 2019-09-03T17:57:02Z Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the `'atomically smooth island'' picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. (C) 1996 American Institute of Physics. Article in Journal/Newspaper Smooth Island The Hong Kong University of Science and Technology: HKUST Institutional Repository Smooth Island ENVELOPE(-64.265,-64.265,-65.228,-65.228) |
institution |
Open Polar |
collection |
The Hong Kong University of Science and Technology: HKUST Institutional Repository |
op_collection_id |
ftunivsthongkong |
language |
English |
description |
Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the `'atomically smooth island'' picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. (C) 1996 American Institute of Physics. |
format |
Article in Journal/Newspaper |
author |
Yuan, ZL Xu, ZY Zheng, BZ Luo, CP Xu, JZ Ge, WK Zhang, PH Yang, XP |
spellingShingle |
Yuan, ZL Xu, ZY Zheng, BZ Luo, CP Xu, JZ Ge, WK Zhang, PH Yang, XP Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
author_facet |
Yuan, ZL Xu, ZY Zheng, BZ Luo, CP Xu, JZ Ge, WK Zhang, PH Yang, XP |
author_sort |
Yuan, ZL |
title |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_short |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_full |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_fullStr |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_full_unstemmed |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_sort |
optical study of heterointerface configuration in narrow gaas/algaas single quantum wells prepared with growth interruption |
publishDate |
1996 |
url |
http://repository.ust.hk/ir/Record/1783.1-26484 http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0021-8979&rft.volume=79&rft.issue=2&rft.date=1996&rft.spage=1073&rft.epage=1077&rft.aulast=Yuan&rft.aufirst=ZL&rft.atitle=Optical+study+of+heterointerface+configuration+in+narrow+GaAs/AlGaAs+single+quantum+wells+prepared+with+growth+interruption http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1996TQ77500074 http://www.scopus.com/record/display.url?eid=2-s2.0-0029753407&origin=inward |
long_lat |
ENVELOPE(-64.265,-64.265,-65.228,-65.228) |
geographic |
Smooth Island |
geographic_facet |
Smooth Island |
genre |
Smooth Island |
genre_facet |
Smooth Island |
op_relation |
http://repository.ust.hk/ir/Record/1783.1-26484 Journal of applied physics, v. 79, (2), 1996, JAN 15, p. 1073-1077 0021-8979 http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0021-8979&rft.volume=79&rft.issue=2&rft.date=1996&rft.spage=1073&rft.epage=1077&rft.aulast=Yuan&rft.aufirst=ZL&rft.atitle=Optical+study+of+heterointerface+configuration+in+narrow+GaAs/AlGaAs+single+quantum+wells+prepared+with+growth+interruption http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1996TQ77500074 http://www.scopus.com/record/display.url?eid=2-s2.0-0029753407&origin=inward |
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1766197498955694080 |