25-Gb/s transmission over 2.5-km SSMF by silicon MRR Enhanced 1.55-µm III-V/SOI DML
International audience The use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investi...
Published in: | IEEE Photonics Technology Letters |
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Main Authors: | , , , , , , , , , , , , , , , |
Other Authors: | , , , , , , , , , , , , , , |
Format: | Article in Journal/Newspaper |
Language: | English |
Published: |
HAL CCSD
2017
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Subjects: | |
Online Access: | https://hal.science/hal-01533977 https://hal.science/hal-01533977/document https://hal.science/hal-01533977/file/Cristofori_ptl_2017_preprint.pdf https://doi.org/10.1109/LPT.2017.2700497 |
Summary: | International audience The use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-µm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER< 1e−9) at 25 Gb/s data rate over 2.5-km SSMF without dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications. |
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