Design of InP membrane SOA with butt-joint active passive interface

A butt-joint SOA design for InP on Si membrane (IMOS) platform is proposed. The new design features the butt-joint interface between the SOA and passive nanophotonic waveguide, which makes the interface a factor of 2 to 6 shorter than in the current twin-guide SOAs, with possibility to reduce it fur...

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Bibliographic Details
Main Authors: Zozulia, A., Pogoretsky , V., van Veldhoven, P.J., Bolk, J., Williams, K.A., Rihani, S., Berry, G., Robertson, M., Rawsthorne, J., Jiao, Y.
Format: Article in Journal/Newspaper
Language:English
Published: 2022
Subjects:
DML
Online Access:https://research.tue.nl/en/publications/15557078-a401-44f5-a5f8-364be2d39cd5
https://pure.tue.nl/ws/files/297909392/FullPaper_Zozulia_Benelux2022_final.pdf
Description
Summary:A butt-joint SOA design for InP on Si membrane (IMOS) platform is proposed. The new design features the butt-joint interface between the SOA and passive nanophotonic waveguide, which makes the interface a factor of 2 to 6 shorter than in the current twin-guide SOAs, with possibility to reduce it further to factor of 5-10. This makes the new SOA a promising candidate for high-speed directly modulated lasers (DML) applications, where extremely short SOAs (40-100 μm long) and short distances between reflectors are usually required.

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