Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001)
International audience We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low P As = 2 10 -6 torr leading to a 2D/3D growth mode transition me...
Published in: | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) |
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Main Authors: | , , , , , , , , , |
Other Authors: | , , , , , , , , , , , , , , , , , , , , |
Format: | Conference Object |
Language: | English |
Published: |
HAL CCSD
2002
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Subjects: | |
Online Access: | https://hal.univ-grenoble-alpes.fr/hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255/document https://hal.univ-grenoble-alpes.fr/hal-02353255/file/Monat2002.pdf https://doi.org/10.1109/ICIPRM.2002.1014491 |
Summary: | International audience We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low P As = 2 10 -6 torr leading to a 2D/3D growth mode transition measured by WEED at 1.8 ML, photoluminescence spectra with a FWHMs as low as 68meV at 300K have been obtained for a 4ML InSa deposit. Photoluminescence measurements as a function of the excitation power show that the multi-component PL spectra can be understood in terms of fundamental and excited levels of InAs islands. The fundamental peak (FWHM equal to 22meV at 8K) reveals a very low island size dispersion. Plane-view TEM and AFM images show that InAs islands are quantum << sticks >> aligned along [1-10], with flat top surfaces. Cross-section TEM imaging shows a very weak height dispersion attributed to the ability of the InAs/InP(00l) system to allow island height variation by monolayer fluctuation. |
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