A dissociated dislocation in an ultra thin silicon plate

• Published in: Philosophical Magazine
• Language: English
• Published: Taylor & Francis 2010
• Subjects: Physical Sciences; Roland; sami
• Online Access: http://hdl.handle.net/2262/47367; https://doi.org/10.1080/14786430600669824

Abstract Simplified explicit expressions are firstly presented to describe the elastic displacement field of a periodic family of misfit dislocations running parallel to the two free surfaces of an elastically isotropic plate. In the situation where the period tends to infinity, the use of these expressions proves to be quite valuable to investigate the change of the separation distance S between two partial dislocations as a function of the position of one partial and orientation of the fault plane. For the two 30? Shockley partials of a dissociated screw dislocation in an ultra thin silicon plate, numerical results indicate that S can change drastically. This property is confirmed in anisotropic elasticity for a dislocation located nearby the free surface of a semi infinite crystal. These results emphasize that a particular attention should be paid to precise measurements of the local thickness and positions of the partials when weak beam or high resolution experiments in transmission electron microscopy are used. : User ID: 8607328 merged with this user on 18-May-2007 by Office, Editorial Youssef, Sami, [e-mail] merged with this user on 05-Jun-2008 by Office, Editorial (Youssef, Sami) : User ID: 448406 merged with this user on 22-Sep-2004 by Davis, E A; User ID: 2918241 merged with this user on 02-Mar-2006 by Office, Editorial Bonnet, Roland, [e-mail] [Last in: 02-Oct-2008 05:21] merged with this user on 03-Oct-2008 by Office, Editorial (BONNET, Roland) [e-mail] (Youssef, Sami) [e-mail] (BONNET, Roland) Faculte des Sciences de Monastir, Unite de Recherche Physique des Solides - Monastir - TUNISIA (Youssef, Sami) CNRS - FRANCE (BONNET, Roland) FRANCE TUNISIA