Design of 1.3 µm transmitters by metalorganic vapor phase selective area growth

• Main Author: Binet, Guillaume
• Other Authors: Institut Jean Le Rond d'Alembert (DALEMBERT), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris VI, Sophie Bouchoule, Pierre-Yves Lagrée, Jean Decobert
• Format: Doctoral or Postdoctoral Thesis
• Language: French
• Published: HAL CCSD 2016
• Subjects: 1,3 micron; Selective area growth; Photonic integrated circuit; Épitaxie sélective; MOVPE; Circuit intégré photonique; ALGAINAS; Modélisation de croissance d'interface; [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic; DML
• Online Access: https://theses.hal.science/tel-01534734; https://theses.hal.science/tel-01534734/document; https://theses.hal.science/tel-01534734/file/2016PA066524.pdf

The development of passive optical networks and the increase of short-reach connections make an increasing need for efficient, energy-friendly and low-cost transmitters emitting at 1.3 µm.To this end, monolithic photonic integration, which aims to embed several optical functions into the same circuit, is a solution. Selective area growth (SAG) by metal-organic vapor-phase-epitaxy (MOVPE) seems to be an attractive technique to achieve this integration. This approach allows defining, in a single epitaxial step, the structures of the different unitary photonic functions constituting the photonic integrated circuit. One issue of this technique is the growth modeling, necessary to predict the material distribution. Previously, the model was only taking into account vapor phase diffusion phenomena, neglecting surface phenomena. Consequently a more accurate approach was developed, based on interface relaxation.Simultaneously, we designed seven different active structures, all based on AlGaInAs multi-quantum wells, in order to optimize the DML and EML devices emitting at 1.3µm . We performed wide area laser and photocurrent absorption measurements to select the best trade-off design for devices fabrication.In order to perform accurate SAG of the selected structure, experimental study has been done to optimize the growth using transmission electronic microscopy and X-ray micro-diffraction. Devices have been processed and exhibit state of the art performances. A bandwidth of 12.5 GHz was demonstrated for a 250 µm long DML and 32 Gbit/s open eye diagram with a 10 dB dynamic extinction ratio has been shown, on a EML with a 100 µm long EAM. Le développement des réseaux optiques et l’augmentation des interconnexions à courtes distances, amènent un besoin croissant en transmetteurs émettant à 1,3 µm, performants, peu énergivores et fabriqués à bas coût.Ainsi, l’intégration photonique monolithique, qui vise à juxtaposer plusieurs fonctions optiques dans un même circuit, est une solution. L’épitaxie sélective en phase vapeur ...