Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

• Published in: AIP Advances
• Main Authors: Khosa, Rabia Yasmin, Þorsteinsson, Einar Baldur, Winters, M., Rorsman, N., Karhu, R., Hassan, J., Sveinbjörnsson, Einar
• Other Authors: Raunvísindastofnun (HÍ), Science Institute (UI), Verkfræði- og náttúruvísindasvið (HÍ), School of Engineering and Natural Sciences (UI), Háskóli Íslands, University of Iceland
• Format: Article in Journal/Newspaper
• Language: English
• Published: AIP Publishing 2018
• Subjects: Eðlisfræði; Raffræði; SiC MOSFET; The Gate; Iceland
• Online Access: https://hdl.handle.net/20.500.11815/752; https://doi.org/10.1063/1.5021411

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakd...