90 nm SRAM Static and Dynamic Mode Real-Time Testing at Concordia Station in Antarctica

• Published in: IEEE Transactions on Nuclear Science
• Main Authors: Tsiligiannis, Georgios, Dilillo, Luigi, Bosio, Alberto, Girard, Patrick, Pravossoudovitch, Serge, Virazel, Arnaud, Cocquerez, Philippe, Autran, Jean-Luc, Litterio, Antonio, Wrobel, Frédéric, Saigné, Frédéric
• Other Authors: Test and dEpendability of microelectronic integrated SysTems (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Italian National Program for Research in Antarctica (PNRA), Radiations et composants (RADIAC), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-09-BLAN-0155,HAMLET(2009)
• Format: Article in Journal/Newspaper
• Language: English
• Published: HAL CCSD 2014
• Subjects: 90 nm; atmospheric neutrons; Concordia station; isotropy; real-time; SRAM; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics; Concordia Station; Antarc*; Antarctica
• Online Access: https://hal.science/hal-04056468; https://hal.science/hal-04056468/document; https://hal.science/hal-04056468/file/52430777.pdf; https://doi.org/10.1109/TNS.2014.2363120

International audience In this work, we introduce the experimental setup and the first results of the Real-Time testing platform of High Altitude Memory Test (HAMLET) project installed at the Concordia station in Antarctica (acceleration factor of 9.8 compared to New York City-NYC). The platform is dedicated for the study of the response of 90 nm Commercial Off The Shelf (COTS) Static Random Access Memories (SRAMs) to atmospheric neutrons, operating in both the static and dynamic modes. Based on the up-to-date obtained results, the Soft Error Rate (SER) of the devices is extracted and compared with accelerated SER data. The results reveal the appearance of phenomena such as Single Event Latchups (SELs) during SRAM operation under real conditions, and not only as a result of accelerated overstressing tests. Additionally, results are in agreement with the Joint Electron Device Engineering Council (JEDEC89) standard acceleration factor and the anisotropy of the neutron flux is also studied.