Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor cap...

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Published in:AIP Advances
Main Authors: Vidarsson, Arnar M., Haasmann, Daniel, Dimitrijev, Sima, Sveinbjörnsson, Einar
Format: Article in Journal/Newspaper
Language:English
Published: Linköpings universitet, Halvledarmaterial 2023
Subjects:
Condensed Matter Physics
Den kondenserade materiens fysik
Iceland
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-195791
https://doi.org/10.1063/5.0151589
id ftlinkoepinguniv:oai:DiVA.org:liu-195791
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spelling ftlinkoepinguniv:oai:DiVA.org:liu-195791 2023-12-31T10:08:15+01:00 Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation Vidarsson, Arnar M. Haasmann, Daniel Dimitrijev, Sima Sveinbjörnsson, Einar 2023 application/pdf http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-195791 https://doi.org/10.1063/5.0151589 eng eng Linköpings universitet, Halvledarmaterial Linköpings universitet, Tekniska fakulteten Univ Iceland, Iceland Griffith Univ, Australia AIP Publishing AIP Advances, 2023, 13:5, orcid:0000-0003-4474-5293 http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-195791 doi:10.1063/5.0151589 ISI:000987937100005 info:eu-repo/semantics/openAccess Condensed Matter Physics Den kondenserade materiens fysik Article in journal info:eu-repo/semantics/article text 2023 ftlinkoepinguniv https://doi.org/10.1063/5.0151589 2023-12-06T23:32:23Z Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed. Funding Agencies|Icelandic Center for Research (Rannis) [185412-052]; University of Iceland Research Fund Article in Journal/Newspaper Iceland LIU - Linköping University: Publications (DiVA) AIP Advances 13 5
institution Open Polar
collection LIU - Linköping University: Publications (DiVA)
op_collection_id ftlinkoepinguniv
language English
topic Condensed Matter Physics
Den kondenserade materiens fysik
spellingShingle Condensed Matter Physics
Den kondenserade materiens fysik
Vidarsson, Arnar M.
Haasmann, Daniel
Dimitrijev, Sima
Sveinbjörnsson, Einar
Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
topic_facet Condensed Matter Physics
Den kondenserade materiens fysik
description Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed. Funding Agencies|Icelandic Center for Research (Rannis) [185412-052]; University of Iceland Research Fund
format Article in Journal/Newspaper
author Vidarsson, Arnar M.
Haasmann, Daniel
Dimitrijev, Sima
Sveinbjörnsson, Einar
author_facet Vidarsson, Arnar M.
Haasmann, Daniel
Dimitrijev, Sima
Sveinbjörnsson, Einar
author_sort Vidarsson, Arnar M.
title Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
title_short Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
title_full Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
title_fullStr Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
title_full_unstemmed Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
title_sort improvement of channel-carrier mobility in 4h-sic mosfets correlated with passivation of very fast interface traps using sodium enhanced oxidation
publisher Linköpings universitet, Halvledarmaterial
publishDate 2023
url http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-195791
https://doi.org/10.1063/5.0151589
genre Iceland
genre_facet Iceland
op_relation AIP Advances, 2023, 13:5,
orcid:0000-0003-4474-5293
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-195791
doi:10.1063/5.0151589
ISI:000987937100005
op_rights info:eu-repo/semantics/openAccess
op_doi https://doi.org/10.1063/5.0151589
container_title AIP Advances
container_volume 13
container_issue 5
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