Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor cap...

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Bibliographic Details
Published in:AIP Advances
Main Authors: Vidarsson, Arnar M., Haasmann, Daniel, Dimitrijev, Sima, Sveinbjörnsson, Einar
Format: Article in Journal/Newspaper
Language:English
Published: Linköpings universitet, Halvledarmaterial 2023
Subjects:
Condensed Matter Physics
Den kondenserade materiens fysik
Iceland
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-195791
https://doi.org/10.1063/5.0151589
Description
Summary:Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed. Funding Agencies|Icelandic Center for Research (Rannis) [185412-052]; University of Iceland Research Fund

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