Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001)
International audience We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low P As = 2 10 -6 torr leading to a 2D/3D growth mode transition me...
Published in: | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) |
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Main Authors: | , , , , , , , , , |
Other Authors: | , , , , , , , , , , , , , , , , , , , , |
Format: | Conference Object |
Language: | English |
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HAL CCSD
2002
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Online Access: | https://hal.univ-grenoble-alpes.fr/hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255/document https://hal.univ-grenoble-alpes.fr/hal-02353255/file/Monat2002.pdf https://doi.org/10.1109/ICIPRM.2002.1014491 |
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Portail HAL - Ecole Centrale de Lyon |
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language |
English |
topic |
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
spellingShingle |
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Monat, Christelle Gendry, Michel Brault, Julien Besland, M.P. Regreny, Philippe Hollinger, Guy Salem, Bassem Olivares, Juan Bremond, Georges Marty, Olivier Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001) |
topic_facet |
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
description |
International audience We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low P As = 2 10 -6 torr leading to a 2D/3D growth mode transition measured by WEED at 1.8 ML, photoluminescence spectra with a FWHMs as low as 68meV at 300K have been obtained for a 4ML InSa deposit. Photoluminescence measurements as a function of the excitation power show that the multi-component PL spectra can be understood in terms of fundamental and excited levels of InAs islands. The fundamental peak (FWHM equal to 22meV at 8K) reveals a very low island size dispersion. Plane-view TEM and AFM images show that InAs islands are quantum << sticks >> aligned along [1-10], with flat top surfaces. Cross-section TEM imaging shows a very weak height dispersion attributed to the ability of the InAs/InP(00l) system to allow island height variation by monolayer fluctuation. |
author2 |
INL - Nanophotonique (INL - Photonique) Institut des Nanotechnologies de Lyon (INL) École Centrale de Lyon (ECL) Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL) Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon) Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL) Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) INL - Hétéroepitaxie et Nanostructures (INL - H&N) Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA) Laboratoire d'électronique, automatique et mesures électriques (LEAME) Université de Lyon-Université de Lyon Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM) Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS) Laboratoire des technologies de la microélectronique (LTM) Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS) Laboratoire des technologies de la microélectronique (LTM ) Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA) Laboratoire de physique de la matière (LPM) Institut National des Sciences Appliquées de Lyon (INSA Lyon) Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) |
format |
Conference Object |
author |
Monat, Christelle Gendry, Michel Brault, Julien Besland, M.P. Regreny, Philippe Hollinger, Guy Salem, Bassem Olivares, Juan Bremond, Georges Marty, Olivier |
author_facet |
Monat, Christelle Gendry, Michel Brault, Julien Besland, M.P. Regreny, Philippe Hollinger, Guy Salem, Bassem Olivares, Juan Bremond, Georges Marty, Olivier |
author_sort |
Monat, Christelle |
title |
Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001) |
title_short |
Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001) |
title_full |
Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001) |
title_fullStr |
Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001) |
title_full_unstemmed |
Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001) |
title_sort |
low size dispersion of inas quantum islands emitting at 1.55μm on inp (001) |
publisher |
HAL CCSD |
publishDate |
2002 |
url |
https://hal.univ-grenoble-alpes.fr/hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255/document https://hal.univ-grenoble-alpes.fr/hal-02353255/file/Monat2002.pdf https://doi.org/10.1109/ICIPRM.2002.1014491 |
op_coverage |
Paris, France |
genre |
Low Island |
genre_facet |
Low Island |
op_source |
Conference Proceedings https://hal.univ-grenoble-alpes.fr/hal-02353255 Conference Proceedings, 2002, Paris, France. pp.565-568, ⟨10.1109/ICIPRM.2002.1014491⟩ |
op_relation |
info:eu-repo/semantics/altIdentifier/doi/10.1109/ICIPRM.2002.1014491 hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255/document https://hal.univ-grenoble-alpes.fr/hal-02353255/file/Monat2002.pdf doi:10.1109/ICIPRM.2002.1014491 |
op_rights |
info:eu-repo/semantics/OpenAccess |
op_doi |
https://doi.org/10.1109/ICIPRM.2002.1014491 |
container_title |
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) |
container_start_page |
565 |
op_container_end_page |
568 |
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1797586720334544896 |
spelling |
ftecolecentrlyon:oai:HAL:hal-02353255v1 2024-04-28T08:28:01+00:00 Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001) Monat, Christelle Gendry, Michel Brault, Julien Besland, M.P. Regreny, Philippe Hollinger, Guy Salem, Bassem Olivares, Juan Bremond, Georges Marty, Olivier INL - Nanophotonique (INL - Photonique) Institut des Nanotechnologies de Lyon (INL) École Centrale de Lyon (ECL) Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL) Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon) Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL) Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) INL - Hétéroepitaxie et Nanostructures (INL - H&N) Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA) Laboratoire d'électronique, automatique et mesures électriques (LEAME) Université de Lyon-Université de Lyon Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM) Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS) Laboratoire des technologies de la microélectronique (LTM) Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS) Laboratoire des technologies de la microélectronique (LTM ) Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA) Laboratoire de physique de la matière (LPM) Institut National des Sciences Appliquées de Lyon (INSA Lyon) Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) Paris, France 2002 https://hal.univ-grenoble-alpes.fr/hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255/document https://hal.univ-grenoble-alpes.fr/hal-02353255/file/Monat2002.pdf https://doi.org/10.1109/ICIPRM.2002.1014491 en eng HAL CCSD IEEE info:eu-repo/semantics/altIdentifier/doi/10.1109/ICIPRM.2002.1014491 hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255/document https://hal.univ-grenoble-alpes.fr/hal-02353255/file/Monat2002.pdf doi:10.1109/ICIPRM.2002.1014491 info:eu-repo/semantics/OpenAccess Conference Proceedings https://hal.univ-grenoble-alpes.fr/hal-02353255 Conference Proceedings, 2002, Paris, France. pp.565-568, ⟨10.1109/ICIPRM.2002.1014491⟩ [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics info:eu-repo/semantics/conferenceObject Conference papers 2002 ftecolecentrlyon https://doi.org/10.1109/ICIPRM.2002.1014491 2024-04-09T02:28:05Z International audience We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low P As = 2 10 -6 torr leading to a 2D/3D growth mode transition measured by WEED at 1.8 ML, photoluminescence spectra with a FWHMs as low as 68meV at 300K have been obtained for a 4ML InSa deposit. Photoluminescence measurements as a function of the excitation power show that the multi-component PL spectra can be understood in terms of fundamental and excited levels of InAs islands. The fundamental peak (FWHM equal to 22meV at 8K) reveals a very low island size dispersion. Plane-view TEM and AFM images show that InAs islands are quantum << sticks >> aligned along [1-10], with flat top surfaces. Cross-section TEM imaging shows a very weak height dispersion attributed to the ability of the InAs/InP(00l) system to allow island height variation by monolayer fluctuation. Conference Object Low Island Portail HAL - Ecole Centrale de Lyon Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) 565 568 |