Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures
At various low-temperature conditions, it is difficult to obtain an accurate sensing response due to temperature-dependent material properties such as bandgap and resistivity of semiconductors. In this study, a gallium nitride (GaN)-based ultraviolet (UV) photodetector with a microheater was demonst...
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ftdoajarticles:oai:doaj.org/article:7957c4984ccf42b996093f083250feb4 2023-05-15T13:33:52+02:00 Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures Sanghun Shin Heewon Lee Hongyun So 2021-01-01T00:00:00Z https://doi.org/10.1109/ACCESS.2021.3070916 https://doaj.org/article/7957c4984ccf42b996093f083250feb4 EN eng IEEE https://ieeexplore.ieee.org/document/9395076/ https://doaj.org/toc/2169-3536 2169-3536 doi:10.1109/ACCESS.2021.3070916 https://doaj.org/article/7957c4984ccf42b996093f083250feb4 IEEE Access, Vol 9, Pp 54184-54189 (2021) Gallium nitride ultraviolet sensors photocurrent microheater low temperature Electrical engineering. Electronics. Nuclear engineering TK1-9971 article 2021 ftdoajarticles https://doi.org/10.1109/ACCESS.2021.3070916 2022-12-31T05:24:47Z At various low-temperature conditions, it is difficult to obtain an accurate sensing response due to temperature-dependent material properties such as bandgap and resistivity of semiconductors. In this study, a gallium nitride (GaN)-based ultraviolet (UV) photodetector with a microheater was demonstrated to compensate for the low-temperature effects. A parallel-type platinum microheater array was fabricated to supply thermal energy by Joule heating. In addition, a silicon oxide layer was deposited between the heater and the GaN surface, allowing an independent voltage supply. Therefore, the change in the signal level was successfully recovered to the initial state in the temperature range of $-27.4-11.5 ^{\circ }\text{C}$ within ~0.64% error without electrical interference. This study supports an active, accurate, and reliable method for the stable measurement of UV signals in various low-temperature environments such as freezer warehouses, Antarctic research stations, and in space. Article in Journal/Newspaper Antarc* Antarctic Directory of Open Access Journals: DOAJ Articles Antarctic IEEE Access 9 54184 54189 |
institution |
Open Polar |
collection |
Directory of Open Access Journals: DOAJ Articles |
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ftdoajarticles |
language |
English |
topic |
Gallium nitride ultraviolet sensors photocurrent microheater low temperature Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
spellingShingle |
Gallium nitride ultraviolet sensors photocurrent microheater low temperature Electrical engineering. Electronics. Nuclear engineering TK1-9971 Sanghun Shin Heewon Lee Hongyun So Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures |
topic_facet |
Gallium nitride ultraviolet sensors photocurrent microheater low temperature Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
description |
At various low-temperature conditions, it is difficult to obtain an accurate sensing response due to temperature-dependent material properties such as bandgap and resistivity of semiconductors. In this study, a gallium nitride (GaN)-based ultraviolet (UV) photodetector with a microheater was demonstrated to compensate for the low-temperature effects. A parallel-type platinum microheater array was fabricated to supply thermal energy by Joule heating. In addition, a silicon oxide layer was deposited between the heater and the GaN surface, allowing an independent voltage supply. Therefore, the change in the signal level was successfully recovered to the initial state in the temperature range of $-27.4-11.5 ^{\circ }\text{C}$ within ~0.64% error without electrical interference. This study supports an active, accurate, and reliable method for the stable measurement of UV signals in various low-temperature environments such as freezer warehouses, Antarctic research stations, and in space. |
format |
Article in Journal/Newspaper |
author |
Sanghun Shin Heewon Lee Hongyun So |
author_facet |
Sanghun Shin Heewon Lee Hongyun So |
author_sort |
Sanghun Shin |
title |
Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures |
title_short |
Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures |
title_full |
Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures |
title_fullStr |
Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures |
title_full_unstemmed |
Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures |
title_sort |
photocurrents recovery in gan uv sensors using microheaters at low temperatures |
publisher |
IEEE |
publishDate |
2021 |
url |
https://doi.org/10.1109/ACCESS.2021.3070916 https://doaj.org/article/7957c4984ccf42b996093f083250feb4 |
geographic |
Antarctic |
geographic_facet |
Antarctic |
genre |
Antarc* Antarctic |
genre_facet |
Antarc* Antarctic |
op_source |
IEEE Access, Vol 9, Pp 54184-54189 (2021) |
op_relation |
https://ieeexplore.ieee.org/document/9395076/ https://doaj.org/toc/2169-3536 2169-3536 doi:10.1109/ACCESS.2021.3070916 https://doaj.org/article/7957c4984ccf42b996093f083250feb4 |
op_doi |
https://doi.org/10.1109/ACCESS.2021.3070916 |
container_title |
IEEE Access |
container_volume |
9 |
container_start_page |
54184 |
op_container_end_page |
54189 |
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1766046678965551104 |