Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001)
International audience We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low P As = 2 10 -6 torr leading to a 2D/3D growth mode transition me...
Published in: | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) |
---|---|
Main Authors: | , , , , , , , , , |
Other Authors: | , , , , , , , , , , , , , , , , , , |
Format: | Conference Object |
Language: | English |
Published: |
HAL CCSD
2002
|
Subjects: | |
Online Access: | https://hal.univ-grenoble-alpes.fr/hal-02353255 https://hal.univ-grenoble-alpes.fr/hal-02353255/document https://hal.univ-grenoble-alpes.fr/hal-02353255/file/Monat2002.pdf https://doi.org/10.1109/ICIPRM.2002.1014491 |