25-Gb/s transmission over 2.5-km SSMF by silicon MRR enhanced 1.55-μm III-V/SOI DML

• Published in: 2017 IEEE Photonics Conference (IPC)
• Main Authors: Cristofori, Valentina, da Ros, Francesco, Ozolins, Oscars, Chaibi, Mohamed, E, Bramerie, Laurent, Ding, Yunhong, Pang, Xiaodan, Shen, Alexandre, Gallet, Antonin, Duan, Guang Hua, Hassan, Karim, Olivier, Ségolene, Popov, Sergei, Jacobsen, Gunnar, Oxenløwe, Leif Katsuo, Peucheret, Christophe
• Other Authors: DTU Fotonik - Department of Photonics Engineering, Danmarks Tekniske Universitet = Technical University of Denmark (DTU), Acreo Swedish ICT AB, Institut des Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), THALES France, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), KTH Royal Institute of Technology Stockholm (KTH ), European Project: 619626,EC:FP7:ICT,FP7-ICT-2013-11,SEQUOIA(2013)
• Format: Conference Object
• Language: English
• Published: HAL CCSD 2017
• Subjects: [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic; DML
• Online Access: https://hal.science/hal-01634603; https://doi.org/10.1109/IPCon.2017.8116138

International audience The use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-μm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER<; 10-9) at 25 Gb/s data rate over 2.5-km SSMF without dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications.