Study of the power performance of gaN based HEMTs with varying field plate lengths

• Main Authors: Kurt G., Toprak, A., Sen O.A., Ozbay, E.
• Format: Article in Journal/Newspaper
• Language: English
• Published: North Atlantic University Union 2015
• Subjects: Coplanar waveguide; Field plate; GaN HEMT; Power amplifiers; RF power applications; Coplanar waveguides; Field effect transistors; Gallium alloys; Gallium nitride; Plates (structural components); Radio frequency amplifiers; Silicon carbide; Continuous wave output power; Field plates; Field-plate structures; GaN HEMTs; High electron mobility transistor (HEMTs); Output power density; Power-added efficiency; High electron mobility transistors; Algan; North Atlantic
• Online Access: http://hdl.handle.net/11693/23092

In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm gate length, 3 µm drain-source space. And also, the field plate structures with...