The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance
Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly r...
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crfrontiers:10.3389/felec.2021.786601 2024-02-11T09:58:55+01:00 The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance Catania, Federica Oliveira, Hugo De Souza Costa Angeli, Martina A. Ciocca, Manuela Pané, Salvador Münzenrieder, Niko Cantarella, Giuseppe 2022 http://dx.doi.org/10.3389/felec.2021.786601 https://www.frontiersin.org/articles/10.3389/felec.2021.786601/full unknown Frontiers Media SA https://creativecommons.org/licenses/by/4.0/ Frontiers in Electronics volume 2 ISSN 2673-5857 journal-article 2022 crfrontiers https://doi.org/10.3389/felec.2021.786601 2024-01-26T10:05:04Z Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly required. The combined effects of temperature (T) from −30.0°C to 50.0°C and relative humidity (RH) stress from 0 to 95% on a-IGZO TFT is presented. The TFT performances and the parameters variation were analysed in two different experiments. First, the TFT response was extracted while undergoing the most extreme climate conditions on Earth, ranging from the African Desert (50.0°C, 22%) to Antarctic (−30.0°C, 0%). Afterwards, the device functionality was demonstrated in three parts of the human body (forehand, arm and foot) at low (35%), medium (60%) and high (95%) relative humidity for on-skin and wearable applications. The sensitivity to T/RH variations suggests the suitability of these TFTs as sensing element for epidermal electronics and artificial skin. Article in Journal/Newspaper Antarc* Antarctic Frontiers (Publisher) Antarctic Frontiers in Electronics 2 |
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description |
Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly required. The combined effects of temperature (T) from −30.0°C to 50.0°C and relative humidity (RH) stress from 0 to 95% on a-IGZO TFT is presented. The TFT performances and the parameters variation were analysed in two different experiments. First, the TFT response was extracted while undergoing the most extreme climate conditions on Earth, ranging from the African Desert (50.0°C, 22%) to Antarctic (−30.0°C, 0%). Afterwards, the device functionality was demonstrated in three parts of the human body (forehand, arm and foot) at low (35%), medium (60%) and high (95%) relative humidity for on-skin and wearable applications. The sensitivity to T/RH variations suggests the suitability of these TFTs as sensing element for epidermal electronics and artificial skin. |
format |
Article in Journal/Newspaper |
author |
Catania, Federica Oliveira, Hugo De Souza Costa Angeli, Martina A. Ciocca, Manuela Pané, Salvador Münzenrieder, Niko Cantarella, Giuseppe |
spellingShingle |
Catania, Federica Oliveira, Hugo De Souza Costa Angeli, Martina A. Ciocca, Manuela Pané, Salvador Münzenrieder, Niko Cantarella, Giuseppe The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
author_facet |
Catania, Federica Oliveira, Hugo De Souza Costa Angeli, Martina A. Ciocca, Manuela Pané, Salvador Münzenrieder, Niko Cantarella, Giuseppe |
author_sort |
Catania, Federica |
title |
The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
title_short |
The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
title_full |
The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
title_fullStr |
The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
title_full_unstemmed |
The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
title_sort |
influence of climate conditions and on-skin positioning on ingazno thin-film transistor performance |
publisher |
Frontiers Media SA |
publishDate |
2022 |
url |
http://dx.doi.org/10.3389/felec.2021.786601 https://www.frontiersin.org/articles/10.3389/felec.2021.786601/full |
geographic |
Antarctic |
geographic_facet |
Antarctic |
genre |
Antarc* Antarctic |
genre_facet |
Antarc* Antarctic |
op_source |
Frontiers in Electronics volume 2 ISSN 2673-5857 |
op_rights |
https://creativecommons.org/licenses/by/4.0/ |
op_doi |
https://doi.org/10.3389/felec.2021.786601 |
container_title |
Frontiers in Electronics |
container_volume |
2 |
_version_ |
1790594735741599744 |