Modelling of SiPM Performance for Detection of Cherenkov Radiation from Extensive Air Showers in UV and Visible Ranges for Application at the TAIGA-IACT Telescope

• Published in: Latvian Journal of Physics and Technical Sciences
• Main Authors: Bogdanov, A.A., Kholupenko, E.E., Tuboltsev, Yu.V., Chichagov, Yu.V.
• Format: Article in Journal/Newspaper
• Language: English
• Published: Walter de Gruyter GmbH 2020
• Subjects: taiga
• Online Access: http://dx.doi.org/10.2478/lpts-2020-0002; https://content.sciendo.com/view/journals/lpts/57/1-2/article-p13.xml; https://www.sciendo.com/pdf/10.2478/lpts-2020-0002

Abstract A novel cluster of sensitive detectors based on silicon photomultipliers (SiPM) is being developed for the Cherenkov gamma-ray telescope TAIGA-IACT (Tunka valley, Republic of Buryatia, Russia). The cluster will be able to detect Cherenkov radiation from extensive air showers in two wide bands: 250–300 nm (UV) and 250–700 nm (visible and UV). Each pixel consists of a Winston cone, 4 SiPMs with the total sensitive area of 144 mm 2 , and readout electronics based on fast analogue memory. During operation in the UV band, a UV-bandpass filter is used to suppress cluster sensitivity in the visible range. In order to evaluate the detection efficiency of the selected SiPMs, a specific software simulator of SiPM output signal has been developed. This simulator takes into account such inherent parameters of SiPMs as total number of microcells, their recharge time, the dark count rate, the effective detection area, the quantum efficiency, the crosstalk between microcells, as well as conditions of SiPM operation, namely, the background noise and the Ohmic load in the readout (front-end) electronics. With this simulator it is possible to determine the expected trigger threshold under given conditions and parameters of selected detectors. Based on preliminary simulations, OnSemi MicroFJ-60035 SiPM chips have been chosen for the novel cluster of TAIGA-IACT. These SiPMs have sensible efficiency in the ultraviolet range (5–20% in the 250–300 nm band) and are distinguished by the presence of a fast output, which allows one to capture a low amplitude signal above a relatively high background noise.