Laser-assisted local metal–organic vapor phase epitaxy
Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. While surface engineering with masking materials or by surface structuring is an effective means for cont...
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craippubl:10.1063/5.0092251 2024-05-19T07:48:27+00:00 Laser-assisted local metal–organic vapor phase epitaxy Trippel, Max Bläsing, Jürgen Wieneke, Matthias Dadgar, Armin Schmidt, Gordon Bertram, Frank Christen, Jürgen Strittmatter, André Deutsche Forschungsgemeinschaft Institute of Nano Science and Technology 2022 http://dx.doi.org/10.1063/5.0092251 https://pubs.aip.org/aip/rsi/article-pdf/doi/10.1063/5.0092251/19331882/113904_1_5.0092251.pdf en eng AIP Publishing Review of Scientific Instruments volume 93, issue 11 ISSN 0034-6748 1089-7623 journal-article 2022 craippubl https://doi.org/10.1063/5.0092251 2024-05-02T06:42:39Z Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. While surface engineering with masking materials or by surface structuring is an effective means for controlling the location of material growth, as well as for improving crystalline properties of epitaxial layers, the commonly involved integral substrate heating presents a limitation, e.g., due to constraints ofr the thermal budget applicable to existing device structures. As a solution, an epitaxial growth approach using a laser source only locally heating the selected growth area, in combination with metal–organic precursors to feed a pyrolithic chemical reaction (also known as metal–organic vapor phase epitaxy, MOVPE), is presented. Without masking or surface structuring, local epitaxial growth of III–V compound semiconductor layers on a 50–1500 µm length-scale, with high structural and optical quality, is demonstrated. We discuss general design rules for reactor chamber, laser heating, temperature measurement, sample manipulation, gas mixing, and distinguish laser-assisted local MOVPE from conventional planar growth for the important compound semiconductor GaAs. Surface de-oxidation prior to growth is mandatory to realize smooth island surfaces. Linear growth rates in the range 0.5–9 µm/h are demonstrated. With increasing island diameter, the probability for plastic deformation within the island increases, depending on reactor pressure. A step-flow mode on the island surface can be achieved by establishing a sufficiently small temperature gradient across the island. Article in Journal/Newspaper Smooth Island AIP Publishing Review of Scientific Instruments 93 11 113904 |
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English |
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Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. While surface engineering with masking materials or by surface structuring is an effective means for controlling the location of material growth, as well as for improving crystalline properties of epitaxial layers, the commonly involved integral substrate heating presents a limitation, e.g., due to constraints ofr the thermal budget applicable to existing device structures. As a solution, an epitaxial growth approach using a laser source only locally heating the selected growth area, in combination with metal–organic precursors to feed a pyrolithic chemical reaction (also known as metal–organic vapor phase epitaxy, MOVPE), is presented. Without masking or surface structuring, local epitaxial growth of III–V compound semiconductor layers on a 50–1500 µm length-scale, with high structural and optical quality, is demonstrated. We discuss general design rules for reactor chamber, laser heating, temperature measurement, sample manipulation, gas mixing, and distinguish laser-assisted local MOVPE from conventional planar growth for the important compound semiconductor GaAs. Surface de-oxidation prior to growth is mandatory to realize smooth island surfaces. Linear growth rates in the range 0.5–9 µm/h are demonstrated. With increasing island diameter, the probability for plastic deformation within the island increases, depending on reactor pressure. A step-flow mode on the island surface can be achieved by establishing a sufficiently small temperature gradient across the island. |
author2 |
Deutsche Forschungsgemeinschaft Institute of Nano Science and Technology |
format |
Article in Journal/Newspaper |
author |
Trippel, Max Bläsing, Jürgen Wieneke, Matthias Dadgar, Armin Schmidt, Gordon Bertram, Frank Christen, Jürgen Strittmatter, André |
spellingShingle |
Trippel, Max Bläsing, Jürgen Wieneke, Matthias Dadgar, Armin Schmidt, Gordon Bertram, Frank Christen, Jürgen Strittmatter, André Laser-assisted local metal–organic vapor phase epitaxy |
author_facet |
Trippel, Max Bläsing, Jürgen Wieneke, Matthias Dadgar, Armin Schmidt, Gordon Bertram, Frank Christen, Jürgen Strittmatter, André |
author_sort |
Trippel, Max |
title |
Laser-assisted local metal–organic vapor phase epitaxy |
title_short |
Laser-assisted local metal–organic vapor phase epitaxy |
title_full |
Laser-assisted local metal–organic vapor phase epitaxy |
title_fullStr |
Laser-assisted local metal–organic vapor phase epitaxy |
title_full_unstemmed |
Laser-assisted local metal–organic vapor phase epitaxy |
title_sort |
laser-assisted local metal–organic vapor phase epitaxy |
publisher |
AIP Publishing |
publishDate |
2022 |
url |
http://dx.doi.org/10.1063/5.0092251 https://pubs.aip.org/aip/rsi/article-pdf/doi/10.1063/5.0092251/19331882/113904_1_5.0092251.pdf |
genre |
Smooth Island |
genre_facet |
Smooth Island |
op_source |
Review of Scientific Instruments volume 93, issue 11 ISSN 0034-6748 1089-7623 |
op_doi |
https://doi.org/10.1063/5.0092251 |
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Review of Scientific Instruments |
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93 |
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11 |
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113904 |
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1799466708239384576 |