One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates
Lateral growth of highly elongated SiGe islands in one dimension has been achieved by ex-situ substrate patterning using a focused ion beam (FIB) to create an array of surface grooves in the Si substrate. Growth of Si0.7Ge0.3 on this template results in preferential formation of strain-relieving isl...
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craippubl:10.1063/1.4778708 2024-02-11T10:03:53+01:00 One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates Gray, J. L. Nichols, P. L. Hull, R. Floro, J. A. U.S. Department of Energy National Science Foundation 2013 http://dx.doi.org/10.1063/1.4778708 https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4778708/14645430/044308_1_online.pdf en eng AIP Publishing Journal of Applied Physics volume 113, issue 4 ISSN 0021-8979 1089-7550 General Physics and Astronomy journal-article 2013 craippubl https://doi.org/10.1063/1.4778708 2024-01-26T09:48:35Z Lateral growth of highly elongated SiGe islands in one dimension has been achieved by ex-situ substrate patterning using a focused ion beam (FIB) to create an array of surface grooves in the Si substrate. Growth of Si0.7Ge0.3 on this template results in preferential formation of strain-relieving islands next to the edges of the grooves under kinetically limited growth conditions. The length of the nanowire-like islands is limited only by the length of the patterned trench. Occasional bridging across the groove is also observed due to non-uniformity of the underlying topography and the strong preference for the formation of four-fold island structures in this system. The success of this method is dependent upon the initial Si buffer layer thickness and on the orientation of the grooves, which must be parallel to the crystallographic 〈110〉 directions. These results demonstrate that important crystallographic as well as kinetic factors must be considered for controlling the lateral growth of nanostructures on patterned substrates. Article in Journal/Newspaper Fold Island AIP Publishing Journal of Applied Physics 113 4 |
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AIP Publishing |
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English |
topic |
General Physics and Astronomy |
spellingShingle |
General Physics and Astronomy Gray, J. L. Nichols, P. L. Hull, R. Floro, J. A. One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates |
topic_facet |
General Physics and Astronomy |
description |
Lateral growth of highly elongated SiGe islands in one dimension has been achieved by ex-situ substrate patterning using a focused ion beam (FIB) to create an array of surface grooves in the Si substrate. Growth of Si0.7Ge0.3 on this template results in preferential formation of strain-relieving islands next to the edges of the grooves under kinetically limited growth conditions. The length of the nanowire-like islands is limited only by the length of the patterned trench. Occasional bridging across the groove is also observed due to non-uniformity of the underlying topography and the strong preference for the formation of four-fold island structures in this system. The success of this method is dependent upon the initial Si buffer layer thickness and on the orientation of the grooves, which must be parallel to the crystallographic 〈110〉 directions. These results demonstrate that important crystallographic as well as kinetic factors must be considered for controlling the lateral growth of nanostructures on patterned substrates. |
author2 |
U.S. Department of Energy National Science Foundation |
format |
Article in Journal/Newspaper |
author |
Gray, J. L. Nichols, P. L. Hull, R. Floro, J. A. |
author_facet |
Gray, J. L. Nichols, P. L. Hull, R. Floro, J. A. |
author_sort |
Gray, J. L. |
title |
One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates |
title_short |
One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates |
title_full |
One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates |
title_fullStr |
One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates |
title_full_unstemmed |
One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates |
title_sort |
one-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates |
publisher |
AIP Publishing |
publishDate |
2013 |
url |
http://dx.doi.org/10.1063/1.4778708 https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4778708/14645430/044308_1_online.pdf |
genre |
Fold Island |
genre_facet |
Fold Island |
op_source |
Journal of Applied Physics volume 113, issue 4 ISSN 0021-8979 1089-7550 |
op_doi |
https://doi.org/10.1063/1.4778708 |
container_title |
Journal of Applied Physics |
container_volume |
113 |
container_issue |
4 |
_version_ |
1790600218036666368 |