Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption

• Published in: Journal of Applied Physics
• Main Authors: Yuan, Z. L., Xu, Z. Y., Zheng, B. Z., Luo, C. P., Xu, J. Z., Ge, Weikun, Zhang, P. H., Yang, X. P.
• Format: Article in Journal/Newspaper
• Language: English
• Published: AIP Publishing 1996
• Subjects: General Physics and Astronomy; Smooth Island
• Online Access: http://dx.doi.org/10.1063/1.360896; https://pubs.aip.org/aip/jap/article-pdf/79/2/1073/8047652/1073_1_online.pdf

Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with...