Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption
Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with...
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craippubl:10.1063/1.360896 2024-02-11T10:08:35+01:00 Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption Yuan, Z. L. Xu, Z. Y. Zheng, B. Z. Luo, C. P. Xu, J. Z. Ge, Weikun Zhang, P. H. Yang, X. P. 1996 http://dx.doi.org/10.1063/1.360896 https://pubs.aip.org/aip/jap/article-pdf/79/2/1073/8047652/1073_1_online.pdf en eng AIP Publishing Journal of Applied Physics volume 79, issue 2, page 1073-1077 ISSN 0021-8979 1089-7550 General Physics and Astronomy journal-article 1996 craippubl https://doi.org/10.1063/1.360896 2024-01-26T09:40:34Z Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the ‘‘atomically smooth island’’ picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. Article in Journal/Newspaper Smooth Island AIP Publishing Smooth Island ENVELOPE(-64.265,-64.265,-65.228,-65.228) Journal of Applied Physics 79 2 1073 1077 |
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English |
topic |
General Physics and Astronomy |
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General Physics and Astronomy Yuan, Z. L. Xu, Z. Y. Zheng, B. Z. Luo, C. P. Xu, J. Z. Ge, Weikun Zhang, P. H. Yang, X. P. Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
topic_facet |
General Physics and Astronomy |
description |
Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the ‘‘atomically smooth island’’ picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. |
format |
Article in Journal/Newspaper |
author |
Yuan, Z. L. Xu, Z. Y. Zheng, B. Z. Luo, C. P. Xu, J. Z. Ge, Weikun Zhang, P. H. Yang, X. P. |
author_facet |
Yuan, Z. L. Xu, Z. Y. Zheng, B. Z. Luo, C. P. Xu, J. Z. Ge, Weikun Zhang, P. H. Yang, X. P. |
author_sort |
Yuan, Z. L. |
title |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_short |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_full |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_fullStr |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_full_unstemmed |
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption |
title_sort |
optical study of heterointerface configuration in narrow gaas/algaas single quantum wells prepared with growth interruption |
publisher |
AIP Publishing |
publishDate |
1996 |
url |
http://dx.doi.org/10.1063/1.360896 https://pubs.aip.org/aip/jap/article-pdf/79/2/1073/8047652/1073_1_online.pdf |
long_lat |
ENVELOPE(-64.265,-64.265,-65.228,-65.228) |
geographic |
Smooth Island |
geographic_facet |
Smooth Island |
genre |
Smooth Island |
genre_facet |
Smooth Island |
op_source |
Journal of Applied Physics volume 79, issue 2, page 1073-1077 ISSN 0021-8979 1089-7550 |
op_doi |
https://doi.org/10.1063/1.360896 |
container_title |
Journal of Applied Physics |
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79 |
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2 |
container_start_page |
1073 |
op_container_end_page |
1077 |
_version_ |
1790607989008236544 |