Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. B...

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Published in:Applied Physics Letters
Main Authors: Fujiwara, Akira, Inokawa, Hiroshi, Yamazaki, Kenji, Namatsu, Hideo, Takahashi, Yasuo, Zimmerman, Neil M., Martin, Stuart B.
Format: Article in Journal/Newspaper
Language:English
Published: AIP Publishing 2006
Subjects:
Double Islands
Online Access:http://dx.doi.org/10.1063/1.2168496
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168496/13766883/053121_1_online.pdf
id craippubl:10.1063/1.2168496
record_format openpolar
spelling craippubl:10.1063/1.2168496 2024-09-15T18:03:55+00:00 Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor Fujiwara, Akira Inokawa, Hiroshi Yamazaki, Kenji Namatsu, Hideo Takahashi, Yasuo Zimmerman, Neil M. Martin, Stuart B. 2006 http://dx.doi.org/10.1063/1.2168496 https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168496/13766883/053121_1_online.pdf en eng AIP Publishing Applied Physics Letters volume 88, issue 5 ISSN 0003-6951 1077-3118 journal-article 2006 craippubl https://doi.org/10.1063/1.2168496 2024-07-18T04:05:32Z We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary metal-oxide-semiconductor technology. Article in Journal/Newspaper Double Islands AIP Publishing Applied Physics Letters 88 5
institution Open Polar
collection AIP Publishing
op_collection_id craippubl
language English
description We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary metal-oxide-semiconductor technology.
format Article in Journal/Newspaper
author Fujiwara, Akira
Inokawa, Hiroshi
Yamazaki, Kenji
Namatsu, Hideo
Takahashi, Yasuo
Zimmerman, Neil M.
Martin, Stuart B.
spellingShingle Fujiwara, Akira
Inokawa, Hiroshi
Yamazaki, Kenji
Namatsu, Hideo
Takahashi, Yasuo
Zimmerman, Neil M.
Martin, Stuart B.
Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
author_facet Fujiwara, Akira
Inokawa, Hiroshi
Yamazaki, Kenji
Namatsu, Hideo
Takahashi, Yasuo
Zimmerman, Neil M.
Martin, Stuart B.
author_sort Fujiwara, Akira
title Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
title_short Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
title_full Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
title_fullStr Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
title_full_unstemmed Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
title_sort single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
publisher AIP Publishing
publishDate 2006
url http://dx.doi.org/10.1063/1.2168496
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168496/13766883/053121_1_online.pdf
genre Double Islands
genre_facet Double Islands
op_source Applied Physics Letters
volume 88, issue 5
ISSN 0003-6951 1077-3118
op_doi https://doi.org/10.1063/1.2168496
container_title Applied Physics Letters
container_volume 88
container_issue 5
_version_ 1810441357656850432

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