Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. B...
| Published in: | Applied Physics Letters |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article in Journal/Newspaper |
| Language: | English |
| Published: |
AIP Publishing
2006
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| Subjects: | |
| Online Access: | https://doi.org/10.1063/1.2168496 https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168496/13766883/053121_1_online.pdf |
| _version_ | 1851503311265464320 |
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| author | Fujiwara, Akira Inokawa, Hiroshi Yamazaki, Kenji Namatsu, Hideo Takahashi, Yasuo Zimmerman, Neil M. Martin, Stuart B. |
| author_facet | Fujiwara, Akira Inokawa, Hiroshi Yamazaki, Kenji Namatsu, Hideo Takahashi, Yasuo Zimmerman, Neil M. Martin, Stuart B. |
| author_sort | Fujiwara, Akira |
| collection | AIP Publishing |
| container_issue | 5 |
| container_title | Applied Physics Letters |
| container_volume | 88 |
| description | We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary metal-oxide-semiconductor technology. |
| format | Article in Journal/Newspaper |
| genre | Double Islands |
| genre_facet | Double Islands |
| geographic | The Gate |
| geographic_facet | The Gate |
| id | craippubl:10.1063/1.2168496 |
| institution | Open Polar |
| language | English |
| long_lat | ENVELOPE(-124.937,-124.937,61.417,61.417) |
| op_collection_id | craippubl |
| op_doi | https://doi.org/10.1063/1.2168496 |
| op_source | Applied Physics Letters volume 88, issue 5 ISSN 0003-6951 1077-3118 |
| publishDate | 2006 |
| publisher | AIP Publishing |
| record_format | openpolar |
| spelling | craippubl:10.1063/1.2168496 2025-12-14T15:02:25+00:00 Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor Fujiwara, Akira Inokawa, Hiroshi Yamazaki, Kenji Namatsu, Hideo Takahashi, Yasuo Zimmerman, Neil M. Martin, Stuart B. 2006 https://doi.org/10.1063/1.2168496 https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168496/13766883/053121_1_online.pdf en eng AIP Publishing Applied Physics Letters volume 88, issue 5 ISSN 0003-6951 1077-3118 journal-article 2006 craippubl https://doi.org/10.1063/1.2168496 2025-11-17T09:59:54Z We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary metal-oxide-semiconductor technology. Article in Journal/Newspaper Double Islands AIP Publishing The Gate ENVELOPE(-124.937,-124.937,61.417,61.417) Applied Physics Letters 88 5 |
| spellingShingle | Fujiwara, Akira Inokawa, Hiroshi Yamazaki, Kenji Namatsu, Hideo Takahashi, Yasuo Zimmerman, Neil M. Martin, Stuart B. Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor |
| title | Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor |
| title_full | Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor |
| title_fullStr | Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor |
| title_full_unstemmed | Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor |
| title_short | Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor |
| title_sort | single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor |
| url | https://doi.org/10.1063/1.2168496 https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168496/13766883/053121_1_online.pdf |